On June 5, the signing ceremony of the science and technology cooperation project between Sichuan university and Rio Tinto Group was held. President Wang Jinsong met with Rio Tinto's Chief Scientist Nigel Steward and his delegation in the VIP Hall of Mingde Building of Wangjiang Campus. Jared Osborne, General Manager of the Department of Technology Development from Rio Tinto Group, Vice President Liang Bin, and other comrades from both sides attended the signing ceremony.
On behalf of the university, Liang Bin welcomed Sinanje and his delegation and briefly introduced the project. He pointed out that Rio Tinto Group is a pioneer in the field of mining and metals, and a global leader in mineral resources exploration, mining and processing. Our university attaches great importance to the cooperation with Rio Tinto, and hopes that both sides will take the signing of this agreement as an opportunity to deepen the exchange and cooperation in joint research and development of green and low-carbon technologies, industrial applications and other aspects, promote the green and low-carbon transformation of energy and contribute to the fight against global climate change.
On behalf of Rio Tinto, Mr. Sinanjie expressed his gratitude for the warm reception of the university and introduced the development of Rio Tinto Group in recent years. He pointed out that Sichuan University has long been committed to low-carbon technology research and development, and is one of the first universities in China to carry out scientific research and talent training in the field of carbon neutrality. He also expressed the willingness to cooperatewith Sichuan University in the key technology area of CCUS and jointly promoting the application of this technology worldwide.
Under the witness of the leaders from both sides, we signed the agreement of scientific and technological cooperation projects. According to the agreement, the two sides will cooperate on the research and development of carbon dioxide mineralization technology and industrial application.